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参数资料
| 型号： | APTM120A80FT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 1200 V, 0.96 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 139K |
| 代理商： | APTM120A80FT1G |
APTM120A80FT1G
APT
M
120A80FT
1
G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V
VGS = 0V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 12A
800
960
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
6696
Coss
Output Capacitance
615
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
80
pF
Qg
Total gate Charge
260
Qgs
Gate – Source Charge
42
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 12A
120
nC
Td(on)
Turn-on Delay Time
45
Tr
Rise Time
27
Td(off)
Turn-off Delay Time
145
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 800V
ID = 12A
RG = 2.2Ω
42
ns
Source - Drain diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
14
IS
Continuous Source current
(Body diode)
Tc = 80°C
10
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 12A
1.1
V
dv/dt
Peak Diode Recovery
25
V/ns
Tj = 25°C
270
trr
Reverse Recovery Time
Tj = 125°C
640
ns
Tj = 25°C
1.3
Qrr
Reverse Recovery Charge
IS = - 12A
VR = 100V
diS/dt = 100A/s
Tj = 125°C
3.5
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 12A
di/dt
≤ 1000A/s
VDD ≤ 800V
Tj ≤ 125°C
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