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参数资料
| 型号： | APTM120DA56T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 1200 V, 0.672 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 145K |
| 代理商： | APTM120DA56T1G |
APTM120DA56T1G
APT
M
120DA56T1G
–
Rev
0
Decem
ber,
2007
www.microsemi.com
4 – 5
Low Voltage Output Characteristics
TJ=25°C
TJ=125°C
0
10
20
30
40
0
5
10
15
20
VDS, Drain to Source Voltage (V)
I D
,Drain
Cu
rrent
(A)
VGS=10V
Low Voltage Output Characteristics
4.5V
5V
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(A)
VGS=6, 7, 8 & 9V
TJ=125°C
Normalized RDS(on) vs. Temperature
0
0.5
1
1.5
2
2.5
3
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
on
,
Drai
n
to
S
o
urce
ON
re
si
stan
ce
VGS=10V
ID=14A
Transfert Characteristics
TJ=25°C
TJ=125°C
0
4
8
12
16
20
012
3456
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ <
0.5 duty cycle
Gate Charge vs Gate to Source
VDS=240V
VDS=600V
VDS=960V
0
2
4
6
8
10
12
0
40
80
120 160 200 240 280 320
Gate Charge (nC)
V
GS
,G
a
te
t
o
Sour
c
e
V
o
lt
a
g
e
ID=14A
TJ=25°C
Ciss
Crss
Coss
10
100
1000
10000
0
50
100
150
200
VDS, Drain to Source Voltage (V)
C,
Cap
a
ci
tan
ce
(pF
)
Capacitance vs Drain to Source Voltage
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM120DA68T1G | 功能描述:MOSFET N-CH 1200V 15A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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| APTM120DSK57T3G | 功能描述:MOSFET MOD DUAL BUCK CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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