参数资料
型号: APTM120DSK57T3
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 17 A, 1200 V, 0.57 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: MODULE-25
文件页数: 1/6页
文件大小: 320K
代理商: APTM120DSK57T3
APTM120DSK57T3
A
P
T
M
120D
SK
57T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
1 – 6
14
13
Q1
Q2
11
18
22
7
31
29
CR2
16
R1
19
10
23
32
CR1
15
8
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
17
ID
Continuous Drain Current
Tc = 80°C
13
IDM
Pulsed Drain current
68
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
570
m
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
22
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1200V
RDSon = 570m max @ Tj = 25°C
ID = 17A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
Dual Buck chopper
MOSFET Power Module
相关PDF资料
PDF描述
APTM120DSK57T3 17 A, 1200 V, 0.57 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM120SK15 60 A, 1200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
APTM120SK15 60 A, 1200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
APTM120TDU57PG 17 A, 1200 V, 0.57 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM120U100D-A1N 116 A, 1200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
APTM120DSK57T3G 功能描述:MOSFET MOD DUAL BUCK CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*
APTM120DU15 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source MOSFET Power Module
APTM120DU15G 功能描述:MOSFET MOD DL COM SRC 1200V SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*
APTM120DU29T 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Common Source MOSFET Power Module
APTM120DU29TG 功能描述:MOSFET MOD DUAL COMMON SRC SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*