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参数资料
| 型号： | APTM120H57FT3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 1/6页 |
| 文件大小： | 319K |
| 代理商： | APTM120H57FT3 |
APTM120H57FT3
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120H
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APT website – http://www.advancedpower.com
1 – 6
11
Q4
14
13
23
Q2
10
8
7
3
4
22
29
31
R1
15
16
32
26
19
18
Q1
Q3
27
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
17
ID
Continuous Drain Current
Tc = 80°C
13
IDM
Pulsed Drain current
68
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
570
m
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
22
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1200V
RDSon = 570m max @ Tj = 25°C
ID = 17A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Full - Bridge
MOSFET Power Module
相关PDF资料 |
PDF描述 |
|---|---|
| APTM120H57FT | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120H57FT | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120SK29T | 34 A, 1200 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM120SK29T | 34 A, 1200 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM120TA57FP | 17 A, 1200 V, 0.57 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
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| APTM120H57FTG | 功能描述:MOSFET MOD FULL BRIDGE 1200V SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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