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参数资料
| 型号： | APTM20AM05FT |
| 元件分类： | JFETs |
| 英文描述： | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-15 |
| 文件页数： | 1/3页 |
| 文件大小： | 197K |
| 代理商： | APTM20AM05FT |
APTM20AM05FT
A
PT
M
20
A
M
05
FT
–
R
ev
0
Ju
ne
,2
00
3
APT website – http://www.advancedpower.com
1 - 3
DK1
OUT
VBUS
NTC2
NTC1
NC
DK2
NC
G2
SK2
NC
SK1
0/VBUS
G1
NC
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
333
ID
Continuous Drain Current
Tc = 80°C
249
IDM
Pulsed Drain current
700
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
5
m
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
333
A
EAR
Repetitive Avalanche Energy
30
EAS
Single Pulse Avalanche Energy
1300
mJ
VDSS = 200V
RDSon = 5m
max @ Tj = 25°C
ID = 333A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS V FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Kelvin Drain for VDS monitoring
Very low stray inductance
- Symmetrical design
- M5 power connectors
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals for signal and M5 for power for
easy PCB mounting
Phase leg
MOSFET Power Module
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