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参数资料
| 型号： | APTM20AM08FT |
| 元件分类： | JFETs |
| 英文描述： | 208 A, 200 V, 0.008 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-12 |
| 文件页数： | 1/6页 |
| 文件大小： | 295K |
| 代理商： | APTM20AM08FT |
APTM20AM08FT
A
PT
M
20A
M
08F
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 6
G1
Q1
VBUS
NTC2
OUT
S1
G2
S2
Q2
0/VBU S
NTC1
S2
G2
NTC2
OUT
VBUS
NTC1
S1
S2
G2
0/VBUS
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
208
ID
Continuous Drain Current
Tc = 80°C
155
IDM
Pulsed Drain current
832
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
8
m
W
PD
Maximum Power Dissipation
Tc = 25°C
781
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 200V
RDSon = 8m
W max @ Tj = 25°C
ID = 208A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Phase leg
MOSFET Power Module
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| APTM20DAM08TG | 208 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM08TG | 208 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM08T | 208 A, 200 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM08T | 208 A, 200 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
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