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参数资料
| 型号： | APTM20DAM10T |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 175 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-12 |
| 文件页数： | 6/6页 |
| 文件大小： | 300K |
| 代理商： | APTM20DAM10T |
APTM20DAM10T
A
PT
M
20D
A
M
10T
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
90
0
50
100
150
200
250
300
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s)
VDS=133V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0
50
100
150
200
250
300
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=133V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
0
50
100
150
200
250
300
ID, Drain Current (A)
E
on
an
d
E
of
f(m
J)
VDS=133V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
1
1.5
2
2.5
3
0
5
10
15
20
Gate Resistance (Ohms)
S
w
it
chi
ng
E
n
er
gy
(
m
J)
Switching Energy vs Gate Resistance
VDS=133V
ID=150A
TJ=125°C
L=100H
0
50
100
150
200
250
300
350
20
40
60
80 100 120 140 160
ID, Drain Current (A)
F
req
u
e
nc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=2.5
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VSD, Source to Drain Voltage (V)
I DR
,Re
ve
rs
e
Dra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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