- 您现在的位置：买卖IC网 > PDF目录51277 > APTM50A15FT1G (MICROSEMI POWER PRODUCTS GROUP) 25 A, 500 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTM50A15FT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 25 A, 500 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT PACKAGE-12 |
| 文件页数： | 2/5页 |
| 文件大小： | 188K |
| 代理商： | APTM50A15FT1G |
APTM50A15FT1G
APT
M
50A15FT
1G
–
Rev
0
Februar
y,
2010
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VDS = 500V
VGS = 0V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 21A
130
156
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
5448
Coss
Output Capacitance
735
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
72
pF
Qg
Total gate Charge
170
Qgs
Gate – Source Charge
38
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 21A
80
nC
Td(on)
Turn-on Delay Time
29
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
80
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 333V
ID = 21A
RG = 4.7Ω
26
ns
Source - Drain diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
25
IS
Continuous Source current
(Body diode)
Tc = 80°C
19
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 21A
1
V
dv/dt
Peak Diode Recovery
30
V/ns
Tj = 25°C
215
trr
Reverse Recovery Time
Tj = 125°C
370
ns
Tj = 25°C
0.90
Qrr
Reverse Recovery Charge
IS = - 21A
VR = 100V
diS/dt = 100A/s
Tj = 125°C
2.6
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 21A
di/dt
≤ 1000A/s
VDD ≤ 333V
Tj ≤ 125°C
相关PDF资料 |
PDF描述 |
|---|---|
| APTM50AM17F | 180 A, 500 V, 0.017 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM17F | 180 A, 500 V, 0.017 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM19F | 163 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM19F | 163 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM19STG | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM50A15UT1G | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTM50AM17F | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg MOSFET Power Module |
| APTM50AM17FG | 功能描述:MOSFET MODULE PHASE LEG SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM50AM19F | 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APTM50AM19FG | 功能描述:MOSFET MODULE PHASE LEG SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
发布紧急采购，3分钟左右您将得到回复。