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参数资料
| 型号： | APTM50AM19STG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-9 |
| 文件页数： | 3/7页 |
| 文件大小： | 305K |
| 代理商： | APTM50AM19STG |
APTM50AM19ST
A
PT
M
50A
M
19S
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
3 – 7
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
180
A
IF = 180A
1.6
1.8
IF = 360A
1.9
VF
Diode Forward Voltage
IF = 180A
Tj = 125°C
1.4
V
Tj = 25°C
130
trr
Reverse Recovery Time
IF = 180A
VR = 400V
di/dt = 600A/s
Tj = 125°C
170
ns
Tj = 25°C
660
Qrr
Reverse Recovery Charge
IF = 180A
VR = 400V
di/dt = 600A/s
Tj = 125°C
2760
nC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.1
Series Diode
0.5
RthJC
Junction to Case
Parallel diode
0.32
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M5
2
3.5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
620
g
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
68
k
W
B 25/85
T25 = 298.16 K
4080
K
ú
ù
ê
é
÷÷
è
-
=
T
B
R
T
1
exp
25
85
/
25
T: Thermistor temperature
RT: Thermistor value at T
相关PDF资料 |
PDF描述 |
|---|---|
| APTM50AM19ST | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM19ST | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM24S | 150 A, 500 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM24S | 150 A, 500 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM35FT | 99 A, 500 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
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