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参数资料
| 型号： | APTM50AM25FT |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 149 A, 500 V, 0.025 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-15 |
| 文件页数： | 2/3页 |
| 文件大小： | 197K |
| 代理商： | APTM50AM25FT |
APTM50AM25FT
A
PT
M
50
A
M
25
FT
–
R
ev
0
Ju
ne
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00
3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1mA
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
1000
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
2500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 74.5A
25
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 8mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±250
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Ciss
Input Capacitance
29.6
Coss
Output Capacitance
4.1
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
1.6
nF
Qg
Total gate Charge
1200
Qgs
Gate – Source Charge
200
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 149A
560
nC
Td(on)
Turn-on Delay Time
15
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
50
Tf
Fall Time
Resistive Switching
VGS = 15V
VBus = 250V
ID = 149A
RG = 0.22
10
ns
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tc = 25°C
149
IS
Continuous Source current
(Body diode)
Tc = 80°C
111
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 149A
1.3
V
dv/dt
Peak Diode Recovery
5
V/ns
Tj = 25°C
250
trr
Reverse Recovery Time
IS = - 149A
VR = 250V
diS/dt = 800A/s
Tj = 125°C
500
ns
Tj = 25°C
10.4
Qrr
Reverse Recovery Charge
IS = - 149A
VR = 250V
diS/dt = 800A/s
Tj = 125°C
36
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 149A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
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