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参数资料
| 型号： | APTM50AM70FT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 500 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT PACKAGE-12 |
| 文件页数： | 3/5页 |
| 文件大小： | 189K |
| 代理商： | APTM50AM70FT1G |
AP60T03GS/P
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
30
60
90
012
345
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Cu
rre
n
t(A)
T C =175
o C
10V
8.0V
6.0V
5.0V
V G =4.0V
0
25
50
75
100
125
01
23
4
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Cu
rre
n
t(A)
T C =25
o C
10V
8.0V
6.0V
5.0V
V G =4.0V
0.4
0.8
1.2
1.6
2
-50
25
100
175
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(
ON)
I D =20A
V G =10V
0
20
40
60
80
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =15A
T C =25 ℃
0.1
1
10
100
0
0.5
1
1.5
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =175
o C
0
1
2
3
-50
25
100
175
T j , Junction Temperature (
o C )
V
GS(
th)
(V
)
3
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相关代理商/技术参数 |
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|---|---|
| APTM50AM70UT1G | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
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| APTM50DAM19G | 功能描述:MOSFET N-CH 500V 163A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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