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参数资料
| 型号： | APTM50DAM38T |
| 元件分类： | JFETs |
| 英文描述： | 90 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-12 |
| 文件页数： | 1/6页 |
| 文件大小： | 299K |
| 代理商： | APTM50DAM38T |
APTM50DAM38T
A
PT
M
50D
A
M
38T
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 6
CR1
VBUS
NTC2
0/VBU S
VBUS SENSE
G2
S2
NTC1
Q2
OUT
VBUS
OUT
NTC2
NTC1
0/VBUS
S2
G2
VBUS
SENSE
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
90
ID
Continuous Drain Current
Tc = 80°C
67
IDM
Pulsed Drain current
360
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
38
m
W
PD
Maximum Power Dissipation
Tc = 25°C
694
W
IAR
Avalanche current (repetitive and non repetitive)
46
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 500V
RDSon = 38m
W max @ Tj = 25°C
ID = 90A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Boost chopper
MOSFET Power Module
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| APTM50H15UT1G | 25 A, 500 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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