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参数资料
| 型号： | APTM50DHM38 |
| 元件分类： | JFETs |
| 英文描述： | 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 292K |
| 代理商： | APTM50DHM38 |
APTM50DHM38
A
PT
M
50D
H
M
38
–
R
ev
2
A
pr
il,
2004
APT website – http://www.advancedpower.com
1 – 6
S4
G4
VBUS
0/VBUS
S1
G1
OUT1
OUT2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
90
ID
Continuous Drain Current
Tc = 80°C
67
IDM
Pulsed Drain current
360
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
38
m
W
PD
Maximum Power Dissipation
Tc = 25°C
694
W
IAR
Avalanche current (repetitive and non repetitive)
46
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 500V
RDSon = 38m
W max @ Tj = 25°C
ID = 90A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Asymmetrical - bridge
MOSFET Power Module
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM50DHM38G | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM50DHM65T | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTM50DHM65T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - MOSFET - Bulk |
| APTM50DHM65TG | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM50DHM75T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Asymmetrical - Bridge MOSFET Power Module |
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