- 您现在的位置：买卖IC网 > PDF目录48375 > APTM50DUM38T (MICROSEMI POWER PRODUCTS GROUP) 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTM50DUM38T |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-12 |
| 文件页数： | 6/6页 |
| 文件大小： | 297K |
| 代理商： | APTM50DUM38T |
APTM50DUM38T
A
PT
M
50D
U
M
38T
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
20
40
60
80
100
120
140
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s
)
VDS=333V
RG=2
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
20
40
60
80
100
120
140
ID, Drain Current (A)
t r
an
d
t
f(n
s
)
VDS=333V
RG=2
TJ=125°C
L=100H
0
50
100
150
200
250
300
350
400
20
30
40
50
60
70
80
ID, Drain Current (A)
F
req
ue
nc
y
(
k
H
z)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=2
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,Re
v
ers
eDra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
20
40
60
80
100
120
140
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=333V
RG=2
TJ=125°C
L=100H
Eon
Eoff
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
Switching Energy vs Gate Resistance
VDS=333V
ID=90A
TJ=125°C
L=100H
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| APTM50UM19S | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM50UM19SG | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM50UM19S | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTML20UM18R010T1AG | 44 A, 200 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTML50UM90R020T1AG | 52 A, 500 V, 0.108 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM50DUM38TG | 功能描述:MOSFET MOD DUAL COMMON SRC SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM50H10FT3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM50H10FT3G | 功能描述:MOSFET MODULE FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM50H14FT3 | 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APTM50H14FT3G | 功能描述:MOSFET MOD FULL BRIDGE 500V SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
发布紧急采购，3分钟左右您将得到回复。