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参数资料
| 型号： | APTM50H15FT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 25 A, 500 V, 0.156 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT PACKAGE-12 |
| 文件页数： | 1/5页 |
| 文件大小： | 191K |
| 代理商： | APTM50H15FT1G |
APTM50H15FT1G
APT
M
50H15FT
1G
–
Rev
0
Februar
y,
2010
www.microsemi.com
1 – 5
79
1
4
NTC
11
810
12
3
6
Q1
Q2
5
Q4
Q3
2
Pins 3/4 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
25
ID
Continuous Drain Current
Tc = 80°C
19
IDM
Pulsed Drain current
135
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
156
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
208
W
IAR
Avalanche current (repetitive and non repetitive)
21
A
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 8 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Full - Bridge
MOSFET Power Module
VDSS = 500V
RDSon = 130mΩ typ @ Tj = 25°C
ID = 25A @ Tc = 25°C
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