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参数资料
| 型号： | APTM50HM35F |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 99 A, 500 V, 0.035 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-12 |
| 文件页数： | 6/6页 |
| 文件大小： | 292K |
| 代理商： | APTM50HM35F |
APTM50HM35F
A
PT
M
50H
M
35F
–R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
0
20 40 60 80 100 120 140 160
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s)
VDS=333V
RG=1
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0
20
40
60
80 100 120 140 160
ID, Drain Current (A)
t r
an
d
t
f(n
s
)
VDS=333V
RG=1
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
6
0
20
406080 100 120 140 160
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
VDS=333V
RG=1
TJ=125°C
L=100H
Eon
Eoff
0
2
4
6
8
10
0
5
10
15
20
25
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
Switching Energy vs Gate Resistance
VDS=333V
ID=99A
TJ=125°C
L=100H
0
50
100
150
200
250
300
350
400
450
10 20 30 40 50 60 70 80 90
ID, Drain Current (A)
F
req
ue
nc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=1
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,Re
v
ers
eDra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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参数描述 |
|---|---|
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