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参数资料
| 型号： | APTM50HM35FG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 99 A, 500 V, 0.039 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP6, 12 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 287K |
| 代理商： | APTM50HM35FG |
APTM50HM35FG
A
P
T
M
50H
M
35F
G
–
R
ev
2
J
ul
y,
2006
www.microsemi.com
1 – 6
S4
G4
S3
Q3
G3
G1
Q1
Q4
0/VBUS
VBUS
OU
T2
OU
T1
G2
Q2
S2
S1
S4
G4
G2
S2
VBUS
0/VBUS
S1
G1
S3
OUT1
OUT2
G3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
99
ID
Continuous Drain Current
Tc = 80°C
74
IDM
Pulsed Drain current
396
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
39
m
PD
Maximum Power Dissipation
Tc = 25°C
781
W
IAR
Avalanche current (repetitive and non repetitive)
51
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 500V
RDSon = 35m typ @ Tj = 25°C
ID = 99A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Full - Bridge
MOSFET Power Module
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相关代理商/技术参数 |
参数描述 |
|---|---|
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