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参数资料
| 型号： | AQV410EHA |
| 厂商： | PANASONIC CORP |
| 元件分类： | 继电器，输入/输出模块 |
| 英文描述： | Solid State Relay (with MOSFET Output) 6pin DIP (Form B, Normally-Closed) |
| 中文描述： | TRANSISTOR OUTPUT SOLID STATE RELAY, 5000 V ISOLATION-MAX |
| 封装： | DIP-6 |
| 文件页数： | 2/4页 |
| 文件大小： | 885K |
| 代理商： | AQV410EHA |
GU-E PhotoMOS (AQV414E, AQV41EH)
RATING
2. Electrical characteristics (Ambient temperature: 25°C 77°F)
Note: Recommendable LED forward current
Standard type IF = 5 mA
Reinforced type IF = 5 to 10 mA
*Operate/Reverse time
■
Item
Symbol
Type of
connec-
tion
AQV414E(A) AQV412EH(A) AQV410EH(A) AQV414EH(A)
Condition
Input
LED operate (OFF)
current
Typical
IFoff
—
1.45 mA
1.9 mA
IL= Max.
Maximum
3.0 mA
LED reverse (ON)
current
Minimum
IFon
—
0.3 mA
0.4 mA
IL= Max.
Typical
1.40 mA
1.8 mA
LED dropout voltage
Typical
VF
—
1.25 V (1.14 V at IF= 5 mA)
IF= 50 mA
Maximum
1.5 V
Output
On resistance
Typical
Ron
A
26
1
18
25.2
IF = 0 mA
IL= Max.
Within 1 s on time
Maximum
50
2.5
35
50
Typical
Ron
B
20
0.55
13
19
IF= 0 mA
IL= Max.
Within 1 s on time
Maximum
25
1.3
17.5
25
Typical
Ron
C
10
0.3
6.5
10
IF= 0 mA
IL= Max.
Within 1 s on time
Maximum
12.5
0.7
8.8
12.5
Off state leakage
current
Maximum
ILeak
—1 A
10 A
IF= 5 mA
VL = Max.
Transfer
characteristics
Switching
speed
Operate
(OFF) time*
Typical
Toff
—
0.7 ms
3 ms
1.5 ms
1.3 ms
IF = 0 mA 5 mA
IL = Max.
Maximum
2.0 ms
10 ms
3.0 ms
Reverse
(ON) time*
Typical
Ton
—
0.1 ms
0.3 ms
IF= 5 mA 0 mA
IL = Max.
Maximum
1.0 ms
1.5 ms
I/O capacitance
Typical
Ciso
—
0.8 pF
f = 1 MHz
VB = 0 V
Maximum
1.5 pF
Initial I/O isolation
resistance
Minimum
Riso
—
1,000 M
500 V DC
1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)
Item
Symbol
Type of
connection AQV414E(A) AQV412EH(A) AQV410EH(A) AQV414EH(A)
Remarks
Input
LED forward current
IF
50 mA
LED reverse voltage
VR
5 V
Peak forwrd current
IFP
1 A
f = 100 Hz, Duty factor = 0.1%
Power dissipation
Pin
75 mW
Output
Load voltage (peak AC)
VL
400 V
60 V
350 V
400 V
Continuous load current
IL
A
0.12 A
0.55 A
0.13 A
0.12 A
A connection: Peak AC, DC
B,C connection: DC
B
0.13 A
0.65 A
0.15 A
0.13 A
C
0.15 A
0.8 A
0.17 A
0.15 A
Peak load current
Ipeak
0.3 A
1.5 A
0.4 A
0.3 A
A connection: 100 ms (1 shot),
VL = DC
Power dissipation
Pout
500 mW
Total power dissipation
PT
550 mW
I/O isolation voltage
Viso
1,500 V AC
5,000 V AC
Temperature
limits
Operating
Topr
–40°C to +85°C –40°F to +185°F
Non-condensing at low
temperatures
Storage
Tstg
–40°C to +100°C –40°F to +212°F
Toff
Input
Output
10%
90%
Ton
All Rights Reserved COPYRIGHT Matsushita Electric Works, Ltd.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AQV410EHAJ | 制造商:Panasonic Electric Works 功能描述: |
| AQV410EHAX | 功能描述:固态继电器-PCB安装 350v 130mA DIP Form B Norm-Clsd RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| AQV410EHAXJ | 制造商:Panasonic Electric Works 功能描述: |
| AQV410EHAZ | 功能描述:固态继电器-PCB安装 RELAY OPTO SPST 130MA 6 SMD RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| AQV410EHAZJ | 制造商:Panasonic Electric Works 功能描述: |
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