参数资料
型号: AQY412EHA
元件分类: 继电器,输入/输出模块
英文描述: TRANSISTOR OUTPUT SOLID STATE RELAY, 5000 V ISOLATION-MAX
封装: ROHS COMPLIANT, SURFACE MOUNT, DIP-4
文件页数: 1/3页
文件大小: 76K
代理商: AQY412EHA
GU-E 1 Form B (AQY41
EH)
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the initial letters of the part number “AQY”, the surface mount terminal shape indicator “A” and the packing style indicator “X” or “Z” are not marked
on the relay. (Ex. the label for product number AQY412EHAX is 412EH.)
RATING
1. Absolute maximum ratings (Ambient temperature: 25
°C 77°F)
Normally closed DIP4-pin
economic type with
reinforced insulation
GU-E 1 Form B
(AQY41
EH)
Type
I/O isolation
voltage
Output rating*
Package
Part No.
Packing quantity
Through hole
terminal
Surface-mount terminal
Load
voltage
Load
current
Tube packing style
Tape and reel packing style
Tube
Tape and reel
Picked from the
1/2-pin side
Picked from the
3/4-pin side
AC/DC
dual use
Reinforced
5,000 V
60 V
550 mA
DIP4-pin
AQY412EH
AQY412EHA
AQY412EHAX
AQY412EHAZ
1 tube contains:
100 pcs.
1 batch contains:
1,000 pcs.
350 V
130 mA
AQY410EH
AQY410EHA
AQY410EHAX
AQY410EHAZ
400 V
120 mA
AQY414EH
AQY414EHA
AQY414EHAX
AQY414EHAZ
Item
Symbol
AQY412EH(A)
AQY410EH(A)
AQY414EH(A)
Remarks
Input
LED forward current
IF
50 mA
LED reverse voltage
VR
5 V
Peak forward current
IFP
1 A
f = 100 Hz, Duty factor = 0.1%
Power dissipation
Pin
75 mW
Output
Load voltage (peak AC)
VL
60 V
350 V
400 V
Continuous load current
IL
0.55 A
0.13 A
0.12 A
Peak AC, DC
Peak load current
Ipeak
1.5 A
0.4 A
0.3 A
100 ms (1 shot), VL= DC
Power dissipation
Pout
500 mW
Total power dissipation
PT
550 mW
I/O isolation voltage
Viso
5,000 V AC
Temperature
limits
Operating
Topr
–40
°C to +85°C –40°F to +185°F
Non-condensing at low temperatures
Storage
Tstg
–40
°C to +100°C –40°F to +212°F
TESTING
(AQY410EH, 414EH) (AQY412EH)
VDE
mm inch
FEATURES
1. High cost-performance type of
PhotoMOS relay 1 Form B output
2. Low on-resistance
This has been realized thanks to the
built-in MOSFET processed by our
proprietary method, DSD (Double-
diffused and Selective Doping) method.
3. Reinforced insulation of 5,000 V
More than 0.4 mm internal insulation
distance between inputs and outputs.
Conforms to EN41003, EN60950
(reinforced insulation).
4. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
5. High sensitivity and low on-
resistance
Can control max. 0.55 A load current with
5 mA input current.
Low on-resistance of typ.1
(AQY412EH).
6. Low-level off-state leakage current
TYPICAL APPLICATIONS
Power supply
Measuring equipment
Security equipment
Modem
Telephone equipment
Electricity, plant equipment
Sensing equipment
3.2
6.4
4.78
2.9
6.4
4.78
.126
.252
.188
.114
.252
.188
1
2
4
3
Compliance with RoHS Directive
Source electrode
N–
N+
P+
N+
P+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
PhotoMOS.book Page 137 Thursday, March 26, 2009 2:21 PM
All Rights Reserved COPYRIGHT Panasonic Electric Works Co., Ltd.
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