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参数资料
| 型号： | AR1A4M |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-43B, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 116K |
| 代理商： | AR1A4M |
Data Sheet D16172EJ1V0DS
3
AR1 SERIES
AR1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
60 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 0.1 A
150
DC current gain
hFE2 **
VCE =
2.0 V, IC = 0.5 A
100
DC current gain
hFE3 **
VCE =
2.0 V, IC = 1.0 A
50
Low level output voltage
VOL **
VIN =
5.0 V, IC = 0.1 A
0.2
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.3
V
Input resistance
R1
710
13
k
E-to-B resistance
R2
710
13
k
** PW
≤ 350
s, duty cycle ≤ 2 %
AR1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
60 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 0.1 A
150
DC current gain
hFE2 **
VCE =
2.0 V, IC = 0.5 A
100
DC current gain
hFE3 **
VCE =
2.0 V, IC = 1.0 A
50
Low level output voltage
VOL **
VIN =
5.0 V, IC = 0.5 A
0.55
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.3
V
Input resistance
R1
329
470
611
E-to-B resistance
R2
3.29
4.7
6.11
k
** PW
≤ 350
s, duty cycle ≤ 2 %
AR1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
60 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 0.1 A
80
DC current gain
hFE2 **
VCE =
2.0 V, IC = 0.5 A
100
DC current gain
hFE3 **
VCE =
2.0 V, IC = 1.0 A
50
Low level output voltage
VOL **
VIN =
5.0 V, IC = 0.5 A
0.55
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.3
V
Input resistance
R1
154
220
286
E-to-B resistance
R2
1.54
2.2
2.86
k
** PW
≤ 350
s, duty cycle ≤ 2 %
相关PDF资料 |
PDF描述 |
|---|---|
| AR1F3P | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AR1A4A | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AR1A3M | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AR1L2Q | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AR1L3N | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AR1-B0-10-650-5D4-C | 制造商:Carling Technologies 功能描述:A-SERIES CIRCUIT BREAKER - Bulk |
| AR1-B0-10-650-5P4-C | 制造商:Carling Technologies 功能描述:A-SERIES CIRCUIT BREAKER - Bulk |
| AR1-B0-14-630-233-C | 制造商:Carling Technologies 功能描述:A-SERIES CIRCUIT BREAKER - Bulk |
| AR1-B0-14-650-523-D | 制造商:Carling Technologies 功能描述:A-SERIES CIRCUIT BREAKER - Bulk |
| AR1-B0-20-630-183-C | 制造商:Carling Technologies 功能描述:A-SERIES CIRCUIT BREAKER - Bulk |
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