参数资料
型号: ARF1502
元件分类: 功率晶体管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件页数: 1/2页
文件大小: 114K
代理商: ARF1502
050-5600
R
ev
-
7-01
AD
VANCED
INFORMA
TION
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
V
isolation
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 A)
On State Drain Voltage 1 (I
D(ON) = 35A, VGS = 10V)
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Forward Transconductance (V
DS = 25V, ID = 35A)
RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)
Gate Threshold Voltage (V
DS = VGS, ID = 50mA)
MIN
TYP
MAX
200
4.0
100
1000
±400
811
2500
35
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C = 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF 1500
200
70
±30
1500
-55 to 200
300
UNIT
Volts
Amps
Volts
Watts
°C
RF POWER MOSFET
N- CHANNEL ENHANCEMENT MODE
65V 1500W 40MHz
The ARF1500 is an RF power transistor designed for class C/E operation in very high power scientific, commercial,
medical and industrial RF power generator and amplifier applications up to 40 MHz.
Specified 65 Volt, 27.12 MHz Characteristics:
Output Power = 900 Watts.
Gain = 17dB (Class C)
Efficiency > 75%
High Performance Power RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
ARF1502
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA:
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE:
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 5792 15 15
FAX: (33) 5 56 479761
APT Website - http://www.advancedpower.com
THERMAL CHARACTERISTICS
Symbol
RθJC
RθCS
Characteristic (per package unless otherwise noted)
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.12
0.09
UNIT
°C/W
D
S
G
DS
S
GS
S
D
G
S
ARF1500
BeO
135-05
Volts
相关PDF资料
PDF描述
ARF1518 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
ARF440 11 A, 150 V, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
ARF441 11 A, 150 V, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
ARF448B VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF448A VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
相关代理商/技术参数
参数描述
ARF1505 制造商:Microsemi Corporation 功能描述:Trans RF MOSFET N-CH 1200V 25A 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET
ARF1510 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET RF N-CH 1000V 8A T1 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET
ARF1511 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET
ARF1518 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:RF POWER MOSFET
ARF1519 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk