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参数资料
| 型号： | ARF442 |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 300 V, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件页数： | 1/4页 |
| 文件大小： | 55K |
| 代理商： | ARF442 |
N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET
D
G
S
ARF442 200W 100V 13.56MHz
ARF443 200W 100V 13.56MHz
THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443.
MAXIMUM RATINGS
All Ratings: T
C
= 25
°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
commercial, medical and industrial RF power amplifier applications.
Specified 100 Volt, 13.56 MHz Characteristics:
Output Power = 200 Watts.
Gain = 22dB (Typ.)
Efficiency = 73% (Typ.)
Low Cost Common Source RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
On State Drain Voltage 1 (I
D
(ON) = 6.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°C)
Gate-Source Leakage Current (V
GS
=
±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 10V, I
D
= 5.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
300
6
250
1000
±100
3.5
4.5
25
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
RθJC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25
°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF442/443
300
8
±30
167
0.75
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
TO-247
RF OPERATION 1-15MHz
()
POWER MOS IV
050-4506
Rev
C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
相关PDF资料 |
PDF描述 |
|---|---|
| ARF443 | 8 A, 300 V, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| ARF464B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247 |
| ARF464A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247 |
| ARF465A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF465A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF443 | 制造商:Microsemi Corporation 功能描述:PWR MOSFET RF N-CH 300V TO-247AD |
| ARF444 | 制造商:Microsemi Corporation 功能描述:PWR MOSFET RF N-CH 900V TO-247AD |
| ARF444G | 制造商:Microsemi Corporation 功能描述:ARF444 Series N-Channel 300 W 15 MHz Flange Mount RF Power Mosfet - TO-247-3 |
| ARF445 | 制造商:Microsemi Corporation 功能描述:PWR MOSFET RF N-CH 900V TO-247AD |
| ARF446 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
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