参数资料
型号: ARF444
元件分类: JFETs
英文描述: 6.5 A, 900 V, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
文件页数: 3/4页
文件大小: 64K
代理商: ARF444
RF POWER IN (WATTS)
Figure 1, RF Power Out vs RF Power In
Figure 2, RF Power Out vs RF Power In
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
C
, CASE TEMPERATURE (
°C)
Figure 2, Typical Transfer Characteristics
Figure 3, Threshold Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (
°C)
Figure 4, Maximum DC Safe Operating Area
Figure 5, Breakdown Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Capacitance vs. Drain-To-Source Voltage
C,
CAPACITANCE
(pF)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
RF
POWER
OUT
(WATTS)
BV
DSS
(ON),
DRAIN-TO-SOURCE
BREAKDOWN
V
GS
(TH),
THRESHOLD
VOLTAGE
(NORMALIZED)
010
20
30
40
0
2
4
6
8
-50
-25
0
25
50
75
100 125 150
1
5
10
50 100
1000
-50
-25
0
25
50
75
100 125 150
.01
.05
.1
.5
1
5
10
50
100
300
ARF444/445
VDS = 30V
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS
= V
GS
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
Operation
Here
Limited
By
R DS
(ON)
TC = +25°C
TJ = +150°C
1200
800
400
0
16
12
8
4
0
10
5
1
.5
.1
5,000
1,000
500
100
50
10
Duty Cycle = 50%
TJ = -55°C
TJ = +25°C
TJ = +125°C
TJ = -55°C
TJ = +25°C
TJ = +125°C
Crss
Ciss
Coss
Performance of aTypical
Push-Pull Power Amplifier (4-Devices)
f = 13.56 MHz
V
DD
= 300V
V
GS
= 0V
Continuous Wave
050-4906
Rev
D
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相关代理商/技术参数
参数描述
ARF444G 制造商:Microsemi Corporation 功能描述:ARF444 Series N-Channel 300 W 15 MHz Flange Mount RF Power Mosfet - TO-247-3
ARF445 制造商:Microsemi Corporation 功能描述:PWR MOSFET RF N-CH 900V TO-247AD
ARF446 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE
ARF446_03 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE
ARF446G 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 900V 6.5A TO247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET