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参数资料
| 型号： | ARF447 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 405K |
| 代理商： | ARF447 |
05
0-
49
07
R
ev
D
7-
20
03
G
P
S,
C
O
M
O
N
S
O
U
R
C
E
A
M
P
LI
FI
E
R
G
A
IN
(d
B
)
POUT, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
18
16
14
12
10
8
0
50
100
150
200
250
300
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
300
250
200
150
100
50
0
2
4
6
8
10
16
12
8
4
0
1
5
10
15
20
25
30
PIN, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
P
O
U
T,
P
O
W
E
R
O
U
T
(W
A
TT
S
)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
I D
,D
R
A
IN
C
U
R
E
N
T
(A
M
P
E
R
E
S
)
V
G
S
(th
),
TH
R
E
S
H
O
LD
V
O
LT
A
G
E
(N
O
R
M
A
LI
ZE
D
)
ARF446/447
5.5V
4.5V
5V
6V
VGS=6.5, 8, 10 & 15V
Z
qJ
C
,T
H
E
R
M
A
L
IM
P
E
D
A
N
C
E
(°
C
/W
)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.6
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZqJC + TC
t1
t2
P
D
M
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
Class C
V
DD = 250V
f = 40.68 MHz
Table 1 - Typical Class C Large Signal Input-Output Impedance
Freq. (MHz)
Zin - gate shunted by 25W
ZOL - conjugate of optimum load impedance for 250W at 250V
Zin (W)
ZOL (W)
2.0
13.5
27.0
40.0
65.0
142.0 - j 20
73.0 - j 71
30.0 - j 57
15.0 - j 42
6.2 - j 25
20.40 - j 9.6
2.10 - j 6.4
0.50 - j 2.3
0.30 - j 0.4
0.46 + j 2.0
Class C
V
DD = 250V
f = 40.68 MHz
相关PDF资料 |
PDF描述 |
|---|---|
| ARF449B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF449A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF449B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF449A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF461D | POWER, FET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF447G | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 900V 6.5A TO247 制造商:Microsemi Corporation 功能描述:ARF447 Series N-Channel 140 W 65 MHz Flange Mount RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF448 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF448A | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF448A_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF448AG | 制造商:Microsemi Corporation 功能描述:Trans RF MOSFET N-CH 450V 15A 3-Pin(3+Tab) TO-247 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF FETS N CH 450V 15A TO247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET 制造商:Microsemi 功能描述:Trans RF MOSFET N-CH 450V 15A 3-Pin(3+Tab) TO-247 |
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