参数资料
型号: ARF448B
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: 功率晶体管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
封装: TO-247, 3 PIN
文件页数: 3/4页
文件大小: 388K
代理商: ARF448B
05
0-
49
08
R
ev
C
7-
20
03
40
30
20
10
0
60
120
180
240
300
240
180
120
60
0
Freq. (MHz)
Zin - gate shunted by 25W
ZOL - conjugate of optimum load impedance for 250W at 150V
Zin (W)
ZOL (W)
2.0
13.5
27.0
40.0
65.0
56.00 - j 06.0
37.00 - j 26.0
18.00 - j 25.0
9.90 - j 19.2
4.35 - j 11.4
20.90 - j 9.2
2.40 - j 6.8
0.57 - j 2.6
0.31 - j 0.5
0.44 + j 1.9
G
P
S,
C
O
M
O
N
S
O
U
R
C
E
A
M
P
LI
FI
E
R
G
A
IN
(d
B
)
POUT, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
17
16
15
14
13
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
0
2
4
6
8
10
1
5
10
15
20
25
30
PIN, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
P
O
U
T,
P
O
W
E
R
O
U
T
(W
A
TT
S
)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
I D
,D
R
A
IN
C
U
R
E
N
T
(A
M
P
E
R
E
S
)
V
G
S
(th
),
TH
R
E
S
H
O
LD
V
O
LT
A
G
E
(N
O
R
M
A
LI
ZE
D
)
ARF448A/448B
5.5V
4.5V
5V
6V
VGS=8, 10 & 15V
Z
qJ
C
,T
H
E
R
M
A
L
IM
P
E
D
A
N
C
E
C
/W
)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Class C
V
DD = 150V
f = 40.68 MHz
Table 1 - Typical Class C Large Signal Input-Output Impedance
Class C
V
DD = 150V
f = 40.68 MHz
6.5V
0.6
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZqJC + TC
t1
t2
P
D
M
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相关PDF资料
PDF描述
ARF448A VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF448A VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF448B VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF460A VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF460B VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
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