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参数资料
| 型号： | ARF449A |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 代理商： | ARF449A |
050-4909
Rev
C
7-2003
Freq. (MHz)
Z
in - gate shunted by 25
Z
OL - conjugate of optimum load impedance for 150W at 150V
Zin ()ZOL ()
2.0
13.5
27.0
40.0
65.0
80.0
100.0
93.0 - j 10
63.0 - j 43
32.0 - j 43
17.5 - j 34
7.7 - j 22
5.1 - j 16
3.4 - j 12
23.00 - j 7.0
4.30 - j 9.1
1.00 - j 4.2
0.42 - j 1.7
0.35 + j 1.1
0.56 + j 2.5
0.90 + j 3.8
G
PS
,COMMON
SOURCE
AMPLIFIER
GAIN
(dB)
POUT, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
14
12
10
8
6
0
40
80
120
160
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100 125 150
160
120
80
40
0
02
4
6
8
10
25
20
15
10
5
0
1
5
10
15
20
25
30
PIN, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
P
OUT
,POWER
OUT
(WATTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
I D
,DRAIN
CURRENT
(AMPERES)
V
GS(th)
,THRESHOLD
VOLTAGE
(NORMALIZED)
ARF449A/449B
5.5V
4.5V
5V
6V
VGS=8, 10 & 15V
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.8
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
Class C
V
DD
= 150V
f = 81.36 MHz
Table 1 - Typical Class C Large Signal Input-Output Impedance
Class C
V
DD
= 150V
f = 81.36 MHz
6.5V
相关PDF资料 |
PDF描述 |
|---|---|
| ARF461D | POWER, FET, TO-247AD |
| ARF461C | POWER, FET, TO-247AD |
| ARF461CG | POWER, FET, TO-247AD |
| ARF461DG | POWER, FET, TO-247AD |
| ARF462A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF449AG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 450V TO-247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF449B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs |
| ARF449BG | 制造商:Microsemi Corporation 功能描述:Trans RF MOSFET N-CH 450V 9A 3-Pin(3+Tab) TO-247 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 450V TO-247 制造商:Microsemi Corporation 功能描述:ARF449B Series N-Channel 90 W 120 MHz Flange Mount RF Power Mosfet - TO-247-3 |
| ARF450 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF460A | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE |
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