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参数资料
| 型号： | ARF461B |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 70K |
| 代理商： | ARF461B |
050-5987
Rev
C
7-2003
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Voltage 1 (I
D
(ON) = 3.25A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 3.25A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
1000
6.5
25
250
±100
34
35
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
RθJC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF461A/B
1000
6.5
±30
250
0.50
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
250V
150W
65MHz
The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
optimized for both linear and high efficiency classes of operation.
Specified 250 Volt, 40.68 MHz Characteristics:
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Efficiency = 75% (Class C)
Low Cost Common Source RF Package.
Low Vth thermal coefficient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
TO-247
ARF461A
ARF461B
G
D
S
Common
Source
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
相关PDF资料 |
PDF描述 |
|---|---|
| ARF461A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| AS-10.446875-12-3030-SMD-H30-TR | QUARTZ CRYSTAL RESONATOR, 10.446875 MHz |
| AS-32.768-S-F-5050-SMD-H32-TR | QUARTZ CRYSTAL RESONATOR, 32.768 MHz |
| AS-36.000-10-F-30100-EXT-SMD-H32-TR | QUARTZ CRYSTAL RESONATOR, 36 MHz |
| AS-4.9152-10-F-50100-SMD-H32-TR | QUARTZ CRYSTAL RESONATOR, 4.9152 MHz |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF461BG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1000V TO-247 制造商:Microsemi Corporation 功能描述:ARF461B Series N-Channel 150 W 65 MHz Flange Mount RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF461CG | 功能描述:RF MOSFET N-CH 1000V TO247 制造商:microsemi corporation 系列:- 包装:散装 零件状态:停產 晶体管类型:N 通道 频率:65MHz 增益:15dB 电压 - 测试:50V 额定电流:25μA 噪声系数:- 功率 - 输出:150W 电压 - 额定:1000V 封装/外壳:TO-247-3 供应商器件封装:TO-247 标准包装:30 |
| ARF462 | 制造商:POSEICO 制造商全称:POSEICO 功能描述:FAST RECOVERY DIODE |
| ARF462A | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF462B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
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