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参数资料
| 型号： | ARF461D |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | POWER, FET, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 137K |
| 代理商： | ARF461D |
050-4933
Rev
A
6-2008
T
C, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75
100 125 150
25
20
15
10
5
0
1
5
10
15
20
25
30
I D
,DRAIN
CURRENT
(AMPERES)
V
GS(th)
,THRESHOLD
VOL
TAGE
(NORMALIZED)
ARF461C/D
5.5V
6V
4V
V
GS=15, 10, 8 & 6.5V
4.5V
5V
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Zin ( )
Z
OL (
)
2.0
13.5
27
40
65
20.9 - j 9.2
2.4 - j 6.8
.57 - j 2.6
.31 - j 0.5
.44 + j 1.9
38 - j 2.6
31 - j 14
19.6 - j 17.6
12.5 - j 15.8
6.0 - j 10.5
Zin - Gate shunted with 25
IDQ = 100mA
Z
OL - Conjugate of optimum load for 150 Watts output at V
dd = 125V
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
SINGLE PULSE
0.5
0.1
0.3
0.7
0.9
0.05
0.60
0.50
0.40
0.30
0.20
0.10
0
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
0.0284
0.165
0.307
0.00155F
0.00934F
0.128F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
相关PDF资料 |
PDF描述 |
|---|---|
| ARF461C | POWER, FET, TO-247AD |
| ARF461CG | POWER, FET, TO-247AD |
| ARF461DG | POWER, FET, TO-247AD |
| ARF462A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247 |
| ARF462B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF462 | 制造商:POSEICO 制造商全称:POSEICO 功能描述:FAST RECOVERY DIODE |
| ARF462A | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF462B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF462S45 | 制造商:POSEICO 制造商全称:POSEICO 功能描述:FAST RECOVERY DIODE |
| ARF463 | 制造商:POSEICO 制造商全称:POSEICO 功能描述:FAST RECOVERY DIODE |
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