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参数资料
| 型号： | ARF463BP1G |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封装： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 182K |
| 代理商： | ARF463BP1G |
050-4924
Rev
B
3-2006
TO-247
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 A)
On State Drain Voltage 1 (I
D(ON) = 4.5A, VGS = 10V)
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Forward Transconductance (V
DS = 25V, ID = 4.5A)
Gate Threshold Voltage (V
DS = VGS, ID = 50mA)
MIN
TYP
MAX
500
5.0
25
250
±100
23
4
35
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θJC
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C = 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF463A_BP1(G)
500
9
±30
180
0.70
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been
optimized for both linear and high efficiency classes of operation.
Specified 125 Volt, 81.36MHz Characteristics:
Output Power = 100 Watts.
Gain = 15dB (Class AB)
Efficiency = 75% (Class C)
Low Cost Common Source RF Package.
Low Vth thermal coefficient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
Common
Source
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ARF463AP1
ARF463BP1
ARF463AP1G* ARF463BP1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
125V 100A 100MHz
G
D
S
相关PDF资料 |
PDF描述 |
|---|---|
| ARF463AP1G | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463AP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463BP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463BP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463AP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF463S45 | 制造商:POSEICO 制造商全称:POSEICO 功能描述:FAST RECOVERY DIODE |
| ARF464A | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE |
| ARF464B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE |
| ARF465A | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF465AG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:Microsemi ARF465AG Discrete Misc 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1200V 6A TO-247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
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