参数资料
型号: AS018R2-00
元件分类: 开关
英文描述: 0 MHz - 18000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 2.5 dB INSERTION LOSS
封装: CHIP
文件页数: 1/2页
文件大小: 126K
代理商: AS018R2-00
Alpha Industries, Inc. [978] 241-7000
Fax [978] 241-7906 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 3/02A
GaAs IC SPDT Switch
Reflective DC–18 GHz
Features
■ Broadband DC–18 GHz
■ High Isolation, Low Loss, Fast Switching
■ 100% On-Wafer RF and DC Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
AS018R2-00
Description
The AS018R2-00 GaAs SPDT MMIC FET switch chip
is ideal for applications requiring low loss, high isolation
and/or broadband operation. The GaAs MMIC employs
three shunt and two series FETs per arm for low loss,
high isolation switching. Power consumption is very low,
typically 75
A at -5 V. While recommended for operation
up to 18 GHz, the switch performs well through 22 GHz.
INPUT
OUTPUT
0.000
0.861
1.520
1.443
0.181
0.000
0.865
2.025
2.885
Chip Outline
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
2 GHz
10 GHz
18 GHz
2, 10 and 18 GHz
Parameter1
Typ.
Min.
Max.
Unit
Insertion Loss2
1.1
2.2
2.5
dB
Isolation
67
47
42
40
dB
Input Return Loss
15
8.5
10.5
7
dB
Output Return Loss
15
8.5
13
4
dB
Electrical Specifications at 25°C
1. All measurements made in a 50
system, unless otherwise specified.
2. Insertion loss changes by 0.003 dB/°C.
3. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
Parameter
Condition
Frequency
Min.
Typ.
Max.
Unit
Switching Characteristics
Rise, Fall (10/90% or 90/10% RF)
1
s
On, Off (50% CTL to 90/10% RF)
1
s
Video Feedthru3
20
mV
Input Power for 1 dB Compression
0/-5 V
0.5–18 GHz
24
dBm
0.001 GHz
16
dBm
Intermodulation Intercept Point (IP3)
For Two-tone Input Power 13 dBm
0.5–18 GHz
46
dBm
0.001 GHz
35
dBm
Control Voltages
VLow = 0 to -0.2 V @ 20 A Max.
VHigh = -3 V to -6 V @ 250 A Max.
Operating Characteristics at 25°C
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