参数资料
| 型号： | AS1360-50-T |
| 厂商： | ams |
| 文件页数： | 9/14页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 5V .25A SOT23-3 |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 5V |
| 输入电压： | 最高 20V |
| 电压 - 压降（标准）： | 0.4V @ 200mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 250mA（最小） |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 804 (CN2011-ZH PDF) |
| 其它名称： | AS1360-50-TDKR |
AS1360
Datasheet - A p p l i c a t i o n I n f o r m a t i o n
9 Application Information
Figure 14. AS1360 - Typical Application Diagram
+9V
Alkaline
Battery
C IN
1μF
*
3
V IN
AS1360
2
V OUT
C OUT
*
1μF
V OUT = 3.3V
GND
1
*
Tantalum Capacitor
Power Dissipation
Power dissipation (PD) of the AS1360 is the sum of the power dissipated by the p-channel MOSFET and the quiescent current required to bias
the internal voltage reference and the internal power amplifier, and is calculated as:
PD (P-Channel MOSFET) = (V IN - V OUT )I OUT
Internal power dissipation as a result of the bias current for the internal voltage reference and the error amplifier is calculated as:
PD (Bias) = V IN I GND
Total AS1360 power dissipation is calculated as:
PD(Total) = PD (P-Channel MOSFET) + PD (Bias)
(EQ 1)
(EQ 2)
(EQ 3)
The internal quiescent bias current (2 A, typ) is such that the PD(Bias) term of (EQ 3) can be disregarded and the maximum power dissipation
can be estimated using V IN(MAX) and V OUT(MIN) to obtain a maximum voltage differential between V IN and V OUT , and multiplying the maxi-
mum voltage differential by the maximum output current:
PD = (V IN(MAX) V OUT(MIN) )I OUT(MAX)
(EQ 4)
Where:
V IN = 3.3 to 4.1V
V OUT = 3.0V ±2%
I OUT = 1 to 100mA
T AMB(MAX) = 55oC
P MAX = (4.1V - (3.0V x 0.98)) x 100mA = 116.0mW
Junction Temperature
The AS1360 junction temperature (T J ) can be determined by first calculating the thermal resistance from junction temperature-to-ambient tem-
perature.
Note: Thermal resistance is estimated to be the junction temperature-to-air temperature R Φ JA , and is approximately 230°C/W or 335oC/W
(when mounted on 1 square inch of copper). R Φ JA will vary depending on PCB layout, air-flow and application specific conditions.
The AS1360 junction temperature is determined by calculating the rise in T J above T AMB , and then adding the increase of T AMB :
From (EQ 5), the value of T J can be calculated as:
Therefore:
T J = P D(MAX) x R Φ JA + T AMB
T J = 116.0mW x 230oC/W + 55oC
T J = 81.68oC
(EQ 5)
www.austriamicrosystems.com/LDOs/AS1360
Revision 1.07
8 - 13
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