参数资料
型号: AS3658D-BCTP
厂商: ams
文件页数: 86/158页
文件大小: 0K
描述: IC PMU POWER/AUDIO 124-CTBGA
标准包装: 2,500
应用: 便携式设备
电流 - 电源: 7mA
电源电压: 3 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 124-TFBGA
供应商设备封装: 124-CTBGA(8x8)
包装: 带卷 (TR)
AS3658
Data Sheet Confidential
- Detailed Description-Power Management Functions
Table 83. Low power LDO (V2_5) Characteristics, V BAT =4V; ILOAD_ext=0; Tamb=25oC; CLOAD =2.2 μF (Ceramic);
unless otherwise specified
Symbol
Parameter
Min
Typ
Max
Unit
Note
I OFF
Shut down current
100
nA
I VDD
t start
Supply current
Startup time
3
200
μA
μs
Guaranteed per design, consider
chip internal load for measurements.
V out
V out_tol
Output voltage
Output voltage
tolerance
2.4
-50
2.5
2.6
50
V
mV
V LineReg
V LoadReg
Line regulation
Load regulation
-10
-50
-10
-50
10
50
10
50
mV
mV
Static
Transient; Slope: t r =10s
Static
Transient; Slope: t r =10s
8.13
5V Charge Pump
Figure 34. 5V Charge Pump Block diagram
 
 
 
 
 
 
 
 
 
 
 
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The charge pump uses the pad VCP_IN as input, regulates and doubles its voltage with the help of the flying capacitor
between CAPP and CAPN to its output VCP_OUT (the output is automatically limited not to exceed V CPOUT ). If the bit
cp_pulseskip is set, the charge pump operates in pulse skip mode, and only starts cycles if its output voltage is below
this level. In this mode the supply current is reduced, but the output ripple is increased.
The charge pump requires the following external components:
Table 84. Charge Pump External Components
Symbol
C FLY
C STORE
Parameter
External flying
capacitor
External storage
capacitor
Min
370
1.76
Typ
470
2.2
Min
850
2.64
Unit
nF
μF
Note
Ceramic X5R or X7R low-ESR
capacitor between CAPP and CAPN
Ceramic X5R or X7R low-ESR
capacitor between VCP_OUT and
VSS
Schottky Diode for
Dout
startup between
VCP_IN and
1
A
Peak current of schottky Diode
VCP_OUT
www.austriamicrosystems.com
Revision 1v13
85 - 157
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