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参数资料
| 型号： | AS7C31024B-10STCN |
| 厂商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分类： | DRAM |
| 英文描述： | 3.3V 128K X 8 CMOS SRAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 10 ns, PDSO32 |
| 封装： | 8 X 13.40 MM, LEAD FREE, STSOP1-32 |
| 文件页数： | 2/9页 |
| 文件大小： | 120K |
| 代理商： | AS7C31024B-10STCN |
AS7C31024B
3/24/04, v.1.2
Alliance Semiconductor
P. 2 of 9
Functional description
The AS7C31024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words
x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 10/12/15/20 ns with output enable access times (t
OE
) of 5, 6, 7, 8 ns are ideal for
high performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank systems.
When CE1 is high or CE2 is low, the device enters standby mode. If inputs are still toggling, the device will consume I
SB
power. If the bus is
static, then full standby power is reached (I
SB1
). For example, the AS7C31024B is guaranteed not to exceed 18 mW under nominal full
standby conditions.
A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/O0 through I/O7 is
written on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To avoid bus contention,
external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE) high. The chip
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is
active, output drivers stay in high-impedance mode.
Note: Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Key: X = don’t care, L = low, H = high
Absolute maximum ratings
Parameter
Symbol
V
t1
V
t2
P
D
T
stg
T
bias
I
OUT
Min
-0.50
–0.50
–
–65
–55
–
Max
+5.0
Unit
V
V
W
°
C
°
C
mA
Voltage on V
CC
relative to GND
Voltage on any pin relative to GND
Power dissipation
Storage temperature (plastic)
Ambient temperature with V
CC
applied
DC current into outputs (low)
V
CC
+0.50
1.0
+150
+125
20
Truth table
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
H
H
L
OE
X
X
H
L
X
Data
High Z
High Z
High Z
D
OUT
D
IN
Mode
Standby (I
SB
, I
SB1
)
Standby (I
SB
, I
SB1
)
Output disable (I
CC
)
Read (I
CC
)
Write (
ICC
)
相关PDF资料 |
PDF描述 |
|---|---|
| AS7C31024B-10TC | 8-Bit Parallel-Out Serial Shift Registers 14-SOIC -40 to 85 |
| AS7C31024B-10TCN | 8-Bit Parallel-Out Serial Shift Registers 14-SOIC -40 to 85 |
| AS7C31024B-12JC | 3.3V 128K X 8 CMOS SRAM |
| AS7C31024B-12JCN | 8-Bit Parallel-Out Serial Shift Registers 14-SO -40 to 85 |
| AS7C31024B-12STC | 8-Bit Parallel-Out Serial Shift Registers 14-SO -40 to 85 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS7C31024B-10TC | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K X 8 CMOS SRAM |
| AS7C31024B-10TCN | 功能描述:静态随机存取存储器 1M, 3.3V, 10ns, FAST 128K x 8 Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| AS7C31024B-10TCNTR | 功能描述:静态随机存取存储器 1M, 3.3V, 10ns, FAST 128K x 8 Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| AS7C31024B-10TJC | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K X 8 CMOS SRAM |
| AS7C31024B-10TJCN | 功能描述:静态随机存取存储器 1M, 3.3V, 10ns, FAST 128K x 8 Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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