参数资料
型号: AS7C33128NTF18B-80TQI
厂商: ALLIANCE SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: 3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD
中文描述: 128K X 18 ZBT SRAM, 8 ns, PQFP100
封装: 14 X 20 MM, TQFP-100
文件页数: 15/19页
文件大小: 429K
代理商: AS7C33128NTF18B-80TQI
AS7C33128NTF18B
4/28/05, v 1.0
Alliance Semiconductor
P. 15 of 19
AC test conditions
Output load: For t
LZC
, t
LZOE
, t
HZOE
, and t
HZC
, see Figure C. For all others, see Figure B.
Notes:
1) For test conditions, see “AC test conditions”, Figures A, B, C
2) This parameter measured with output load condition in Figure C.
3) This parameter is sampled, but not 100% tested.
4) t
HZOE
is less than t
LZOE
and t
HZC
is less than t
LZC
at any given temperature and voltage.
5) t
CH
measured high above V
IH
and t
CL
measured as low below V
IL
6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled.
7) Write refers to
R/
W
and
BW[a,b]
.
8) Chip select refers to
CE0
,
CE1
, and
CE2
.
Z
0
= 50
D
OUT
50
Figure B: Output load (A)
30 pF*
Figure A: Input waveform
10%
90%
GND
90%
10%
+3.0V
Input pulse level: GND to 3V. See Figure A.
Input rise and fall time (measured at 0.3V and 2.7V): 1.0V/ns. See Figure A.
Input and output timing reference levels: 1.5V.
V
L
= 1.5V
for 3.3V I/O;
= V
DDQ
/2
for 2.5V I/O
Thevenin equivalent:
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
353
/1538
5 pF*
319
/1667
D
OUT
GND
Figure C: Output load(B)
*including scope
and jig capacitance
相关PDF资料
PDF描述
AS7C33128NTF18B-80TQIN LM3915 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
AS7C33128NTF18B 3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF18B-10TQC 3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF18B-10TQCN LM3881 Power Sequencer; Package: MINI SOIC; No of Pins: 8; Qty per Container: 1000; Container: Reel
AS7C33128NTF18B-10TQI 3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD
相关代理商/技术参数
参数描述
AS7C33128NTF18B-80TQIN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF32B 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF32B-10TQC 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF32B-10TQCN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF32B-10TQI 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD