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参数资料
| 型号： | AS7C33128NTF36B-10TQI |
| 厂商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分类： | DRAM |
| 英文描述： | Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection |
| 中文描述： | 128K X 36 ZBT SRAM, 10 ns, PQFP100 |
| 封装： | 14 X 20 MM, TQFP-100 |
| 文件页数： | 15/18页 |
| 文件大小： | 416K |
| 代理商： | AS7C33128NTF36B-10TQI |
AS7C33128NTF32B/36B
4/13/05, v 1.3
Alliance Semiconductor
P. 15 of 18
AC test conditions
Output load: For t
LZC
, t
LZOE
, t
HZOE
, and t
HZC
, see Figure C. For all others, see Figure B.
Notes
1) For test conditions, see “AC test conditions”, Figures A, B, and C
2) This parameter measured with output load condition in Figure C.
3) This parameter is sampled, but not 100% tested.
4) t
HZOE
is less than t
LZOE
, and t
HZC
is less than t
LZC
at any given temperature and voltage.
5) t
CH
is measured high above V
IH
, and t
CL
is measured low below V
IL
6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled.
7) Write refers to
R/
W
and
BW[a,b,c,d]
.
8) Chip select refers to
CE0
,
CE1, and
CE2
.
Input pulse level: GND to 3V. See Figure A.
Input rise and fall time (measured at 0.3V and 2.7V): 1.0V/ns. See Figure A.
Input and output timing reference levels: 1.5V
D
OUT
50
Figure B: Output load (A)
30 pF*
Figure A: Input waveform
10%
90%
GND
90%
10%
+3.0V
V
L
= 1.5V
for 3.3V I/O;
= V
DDQ
/2
for 2.5V I/O
Thevenin equivalent:
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
353
/1538
5 pF*
319
/1667
D
OUT
GND
Figure C: Output load(B)
*including scope
and jig capacitance
相关PDF资料 |
PDF描述 |
|---|---|
| AS7C33128NTF36B-10TQIN | 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF36B-75TQC | Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection |
| AS7C33128NTF36B-75TQCN | 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF36B-75TQI | 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF36B-75TQIN | LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS7C33128NTF36B-10TQIN | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF36B-75TQC | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF36B-75TQCN | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF36B-75TQI | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF36B-75TQIN | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD |
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