参数资料
型号: AS7C33128NTF36B-75TQC
厂商: ALLIANCE SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection
中文描述: 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
封装: 14 X 20 MM, TQFP-100
文件页数: 5/18页
文件大小: 416K
代理商: AS7C33128NTF36B-75TQC
AS7C33128NTF32B/36B
4/13/05, v 1.3
Alliance Semiconductor
P. 5 of 18
Signal descriptions
Snooze Mode
SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to I
SB2
. The duration of
SNOOZE MODE is dictated by the length of time the ZZ is in a High state.
The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE.
When the ZZ pin becomes a logic High, I
SB2
is guaranteed after the time t
ZZI
is met. After entering SNOOZE MODE, all inputs except ZZ
is disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete.
Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting
SNOOZE MODE during t
PUS
, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE.
Burst order
Signal
CLK
CEN
A, A0, A1
DQ[a,b,c,d]
CE0, CE1,
CE2
I/O
I
I
I
I/O
Properties
CLOCK
SYNC
SYNC
SYNC
Description
Clock. All inputs except OE, LBO, and ZZ are synchronous to this clock.
Clock enable. When de-asserted high, the clock input signal is masked.
Address. Sampled when all chip enables are active and ADV/LD is asserted.
Data. Driven as output when the chip is enabled and OE is active.
Synchronous chip enables. Sampled at the rising edge of CLK, when ADV/LD is asserted.
Are ignored when ADV/LD is high.
Advance or Load. When sampled high, the internal burst address counter will increment in
the order defined by the LBO input value. When low, a new address is loaded.
A high during LOAD initiates a READ operation. A low during LOAD initiates a WRITE
operation. Is ignored when ADV/LD is high.
Byte write enables. Used to control write on individual bytes. Sampled along with WRITE
command and BURST WRITE.
Asynchronous output enable. I/O pins are not driven when OE is inactive.
I
SYNC
ADV/LD
I
SYNC
R/W
I
SYNC
BW[a,b,c,d]
I
SYNC
OE
I
ASYNC
LBO
I
STATIC
Selects Burst mode. When tied to V
DD
or left floating, device follows interleaved Burst order. When
driven Low, device follows linear Burst order.
This signal is internally pulled High.
Snooze. Places device in low power mode; data is retained. Connect to GND if unused.
No connect
ZZ
NC
I
-
ASYNC
-
Interleaved burst order LBO = 1
Linear burst order LBO = 0
A1 A0
0 0
0 1
1 0
1 1
A1 A0
0 1
0 0
1 1
1 0
A1 A0
1 0
1 1
0 0
0 1
A1 A0
1 1
1 0
0 1
0 0
A1 A0
0 0
0 1
1 0
1 1
A1 A0
0 1
1 0
1 1
0 0
A1 A0
1 0
1 1
0 0
0 1
A1 A0
1 1
0 0
0 1
1 0
Starting address
First increment
Second increment
Third increment
Starting Address
First increment
Second increment
Third increment
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PDF描述
AS7C33128NTF36B-75TQCN 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
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相关代理商/技术参数
参数描述
AS7C33128NTF36B-75TQCN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF36B-75TQI 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF36B-75TQIN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF36B-80TQC 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF36B-80TQCN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD