参数资料
型号: AS7C33128NTF36B-75TQIN
厂商: ALLIANCE SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box
中文描述: 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
封装: 14 X 20 MM, LEAD FREE, TQFP-100
文件页数: 15/18页
文件大小: 416K
代理商: AS7C33128NTF36B-75TQIN
AS7C33128NTF32B/36B
4/13/05, v 1.3
Alliance Semiconductor
P. 15 of 18
AC test conditions
Output load: For t
LZC
, t
LZOE
, t
HZOE
, and t
HZC
, see Figure C. For all others, see Figure B.
Notes
1) For test conditions, see “AC test conditions”, Figures A, B, and C
2) This parameter measured with output load condition in Figure C.
3) This parameter is sampled, but not 100% tested.
4) t
HZOE
is less than t
LZOE
, and t
HZC
is less than t
LZC
at any given temperature and voltage.
5) t
CH
is measured high above V
IH
, and t
CL
is measured low below V
IL
6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled.
7) Write refers to
R/
W
and
BW[a,b,c,d]
.
8) Chip select refers to
CE0
,
CE1, and
CE2
.
Input pulse level: GND to 3V. See Figure A.
Input rise and fall time (measured at 0.3V and 2.7V): 1.0V/ns. See Figure A.
Input and output timing reference levels: 1.5V
D
OUT
50
Figure B: Output load (A)
30 pF*
Figure A: Input waveform
10%
90%
GND
90%
10%
+3.0V
V
L
= 1.5V
for 3.3V I/O;
= V
DDQ
/2
for 2.5V I/O
Thevenin equivalent:
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
353
/1538
5 pF*
319
/1667
D
OUT
GND
Figure C: Output load(B)
*including scope
and jig capacitance
相关PDF资料
PDF描述
AS7C33128NTF36B-80TQC LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box
AS7C33128NTF36B-80TQCN LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box
AS7C33128NTF36B-80TQI 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF36B-80TQIN LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
AS7C33128PFD32B-133TQC 3.3V 128K X 32/36 pipeline burst synchronous SRAM
相关代理商/技术参数
参数描述
AS7C33128NTF36B-80TQC 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF36B-80TQCN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF36B-80TQI 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
AS7C33128NTF36B-80TQIN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
AS7C33128PFD18B 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 pipeline burst synchronous SRAM