参数资料
型号: AS7C3364FT36B-80TQCN
厂商: ALLIANCE SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: 3.3V 64K x 32/36 Flow Through Synchronous SRAM
中文描述: 64K X 36 STANDARD SRAM, 8 ns, PQFP100
封装: 14 X 20 MM, LEAD FREE, TQFP-100
文件页数: 10/19页
文件大小: 417K
代理商: AS7C3364FT36B-80TQCN
AS7C3364FT32B
AS7C3364FT36B
2/8/05; v.1.2
Alliance Semiconductor
P. 10 of 19
Snooze Mode Electrical Characteristics
Timing characteristics over operating range
Parameter
Sym
t
CYC
t
CD
t
OE
t
LZC
t
OH
t
LZOE
t
HZOE
t
HZC
t
OHOE
t
CH
t
CL
t
AS
t
DS
t
WS
t
CSS
t
AH
t
DH
t
WH
t
CSH
t
ADVS
t
ADSPS
t
ADSCS
t
ADVH
t
ADSPH
t
ADSCH
–65
-75
-80
–10
Unit
ns
Notes
1
1
See “Notes” on page 16.
Min Max
7.5
Min
8.5
Max
Min
10
Max
Min
12
Max
Cycle time
Clock access time
6.5
7.5
8.0
10
ns
Output enable LOW to data valid
3.5
3.5
4.0
4.0
ns
Clock HIGH to output Low Z
2.5
2.5
2.5
2.5
ns
2,3,4
Data output invalid from clock HIGH
2.5
2.5
2.5
2.5
ns
2
Output enable LOW to output Low Z
0
0
0
0
ns
2,3,4
Output enable HIGH to output High Z
3.0
3.5
4.0
5.0
ns
2,3,4
Clock HIGH to output High Z
3.0
3.5
4.0
5.0
ns
2,3,4
Output enable HIGH to invalid output
0
0
0
0
ns
Clock HIGH pulse width
2.5
3.0
4.0
4.0
ns
5
Clock LOW pulse width
2.5
3.0
4.0
4.0
ns
5
Address setup to clock HIGH
1.5
2.0
2.0
2.0
ns
6
Data setup to clock HIGH
1.5
2.0
2.0
2.0
ns
6
Write setup to clock HIGH
1.5
2.0
2.0
2.0
ns
6,7
Chip select setup to clock HIGH
1.5
2.0
2.0
2.0
ns
6,8
Address hold from clock HIGH
0.5
0.5
0.5
0.5
ns
6
Data hold from clock HIGH
0.5
0.5
0.5
0.5
ns
6
Write hold from clock HIGH
0.5
0.5
0.5
0.5
ns
6,7
Chip select hold from clock HIGH
0.5
0.5
0.5
0.5
ns
6,8
ADV setup to clock HIGH
1.5
2.0
2.0
2.0
ns
6
ADSP setup to clock HIGH
1.5
2.0
2.0
2.0
ns
6
ADSC setup to clock HIGH
1.5
2.0
2.0
2.0
ns
6
ADV hold from clock HIGH
0.5
0.5
0.5
0.5
ns
6
ADSP hold from clock HIGH
0.5
0.5
0.5
0.5
ns
6
ADSC hold from clock HIGH
0.5
0.5
0.5
0.5
ns
6
Description
Conditions
ZZ > V
IH
Symbol
I
SB2
t
PDS
t
PUS
t
ZZI
t
RZZI
Min
Max
30
Units
mA
cycle
cycle
cycle
Current during Snooze Mode
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to SNOOZE current
ZZ inactive to exit SNOOZE current
2
2
2
0
相关PDF资料
PDF描述
AS7C3364FT36B-80TQI 3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-80TQIN 3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT32B Shielding Gasket; Gasket Style:D-Shaped; Gasket Material:Beryllium Copper alloy #C17200; Length:24"; Height:0.25"; Thickness:0.0045"; Attenuation @ Peak Frequency:100dB; Body Material:Beryllium Copper alloy #C17200 RoHS Compliant: Yes
AS7C3364FT32B-10TQC Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28"
AS7C3364FT32B-10TQCN 3.3V 64K x 32/36 Flow Through Synchronous SRAM
相关代理商/技术参数
参数描述
AS7C3364FT36B-80TQI 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-80TQIN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364NTD32B 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD
AS7C3364NTD32B-133TQC 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD
AS7C3364NTD32B-133TQCN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD