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参数资料
| 型号： | AS7C3364FT36B-80TQIN |
| 厂商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分类： | DRAM |
| 英文描述： | 3.3V 64K x 32/36 Flow Through Synchronous SRAM |
| 中文描述： | 64K X 36 STANDARD SRAM, 8 ns, PQFP100 |
| 封装： | 14 X 20 MM, LEAD FREE, TQFP-100 |
| 文件页数： | 6/19页 |
| 文件大小： | 417K |
| 代理商： | AS7C3364FT36B-80TQIN |
AS7C3364FT32B
AS7C3364FT36B
2/8/05; v.1.2
Alliance Semiconductor
P. 6 of 19
Asynchronous Truth Table
Notes:
1. X means “Don’t Care”
2. ZZ pin is pulled down internally
3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur.
4. Snooze mode means power down state of which stand-by current does not depend on cycle times
5. Deselected means power down state of which stand-by current depends on cycle times
Burst sequence table
Write enable truth table (per byte)
1
1
Key:
X = don’t care, L = low, H = high, n = a, b, c, d;
BWE
,
BWn
= internal write signal.
Function
GWE
BWE
BWa
BWb
BWc
BWd
Write All Bytes
L
X
X
X
X
X
H
L
L
L
L
L
Write Byte a
H
L
L
H
H
H
Write Byte c and d
H
L
H
H
L
L
Read
H
H
X
X
X
X
H
L
H
H
H
H
Operation
ZZ
H
L
L
L
L
OE
X
L
H
X
X
I/O Status
High-Z
Dout
High-Z
Din, High-Z
High-Z
Snooze mode
Read
Write
Deselected
Interleaved burst address (LBO = 1)
A1 A0
0 0
2
nd
Address
0 1
3
rd
Address
1 0
4
th
Address
1 1
Linear burst address (LBO = 0)
A1 A0
0 0
0 1
1 0
1 1
A1 A0
0 1
0 0
1 1
1 0
A1 A0
1 0
1 1
0 0
0 1
A1 A0
1 1
1 0
0 1
0 0
A1 A0
0 1
1 0
1 1
1 0
A1 A0
1 0
1 1
0 0
0 1
A1 A0
1 1
0 0
0 1
1 0
1
st
Address
1
st
Address
2
nd
Address
3
rd
Address
4
th
Address
相关PDF资料 |
PDF描述 |
|---|---|
| AS7C3364FT32B | Shielding Gasket; Gasket Style:D-Shaped; Gasket Material:Beryllium Copper alloy #C17200; Length:24"; Height:0.25"; Thickness:0.0045"; Attenuation @ Peak Frequency:100dB; Body Material:Beryllium Copper alloy #C17200 RoHS Compliant: Yes |
| AS7C3364FT32B-10TQC | Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" |
| AS7C3364FT32B-10TQCN | 3.3V 64K x 32/36 Flow Through Synchronous SRAM |
| AS7C3364FT32B-10TQI | 3.3V 64K x 32/36 Flow Through Synchronous SRAM |
| AS7C3364FT32B-10TQIN | 3.3V 64K x 32/36 Flow Through Synchronous SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS7C3364NTD32B | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD |
| AS7C3364NTD32B-133TQC | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD |
| AS7C3364NTD32B-133TQCN | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD |
| AS7C3364NTD32B-133TQI | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD |
| AS7C3364NTD32B-133TQIN | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD |
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