参数资料
型号: AS8ER128K32Q-150/XT
厂商: AUSTIN SEMICONDUCTOR INC
元件分类: PROM
英文描述: 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
中文描述: 128K X 32 EEPROM 5V MODULE, 150 ns, CQFP68
封装: 0.880 INCH, 0.200 INCH HIEGHT, CERAMIC, QFP-68
文件页数: 3/18页
文件大小: 550K
代理商: AS8ER128K32Q-150/XT
EEPROM
AS8ER128K32
AS8ER128K32
Rev. 5.3 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
Austin Semiconductor, Inc.
WE\, CE\ Pin Operation
During a write cycle, address are latched by the falling edge
of WE\ or CE\, and data is latched by the rising edge of WE\
or CE\.
Write/Erase Endurance and Data Retention Time
The endurance is 10
4 cycles in case of the page programming
and 10
3 cycles in case of the byte programming (1% cumula-
tive failure rate). The data retention time is more than 10
years when a device is page-programmed less than 10
4 cycles.
RDY/Busy\ SIGNAL
RDY/Busy\ signal also allows status of the EEPROM to
be determined. The RDY/Busy\ signal has high impedance
except in write cycle and is lowered to V
OL
after the first write
signal. At the end of the write cycle, the RDY/Busy\ signal
changes state to high impedance. This allows many 58C1001
devices RDY/Busy\ signal lines to be wired-OR together.
PROGRAMMING/ERASE
The 58C1001 does NOT employ a BULK-erase function.
The memory cells can be programmed ‘0’ or ‘1’. A write cycle
performs the function of erase & write on every cycle with
the erase being transparent to the user. The internal erase data
state is considered to be ‘1’. To program the memory array
with background of ALL 0’s or All 1’s, the user would
program this data using the page mode write operation to
program all 1024 128-byte pages.
Data Protection
1. Data Protection against Noise on Control Pins (CE\,
OE\, WE\) During Operation
During readout or standby, noise on the control pins
may act as a trigger and turn the EEPROM to programming
mode by mistake. To prevent this phenomenon, this device
has a noise cancellation function that cuts noise if its width is
20ns or less in program mode.
Be careful not to allow noise of a width more than
20ns on the control pins. See Diagram 1 below.
2. Data Protection at V
CC
On/Off
When V
CC
is turned on or off, noise on the control
pins generated by external circuits (CPU, etc.) may act as a
trigger and turn the EEPROM to program mode by mistake.
To prevent this unintentional programming, the EEPROM must
be kept in an unprogrammable state while the CPR is in an
unstable state.
NOTE:
The EEPROM should be kept in
unprogrammable state during V
CC
on/off by using CPU RE-
SET signal. See the timing diagram below.
DIAGRAM 1
DATA PROTECTION AT V
CC
ON/OFF
*Unprogrammable
V
CC
CPU
RESET
*Unprogrammable
相关PDF资料
PDF描述
AS8ER128K32Q-200/883C 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
AS8ER128K32Q-200/IT 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
AS8ER128K32Q-200/XT 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
AS8F128K32Q-120/XT 128K x 32 FLASH FLASH MEMORY ARRAY
AS8F128K32Q-150/883C 128K x 32 FLASH FLASH MEMORY ARRAY
相关代理商/技术参数
参数描述
AS8ER128K32Q-200/883C 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS
AS8ER128K32Q-200/IT 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS
AS8ER128K32Q-200/XT 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS
AS8ER128K32Q-250/883C 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS
AS8ER128K32Q-250/IT 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS