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参数资料
| 型号： | ASDL-6620-D22 |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | 光敏三极管 |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 文件页数： | 3/4页 |
| 文件大小： | 182K |
| 代理商： | ASDL-6620-D22 |
3
Absolute Maximum Ratings at TA=25°C
Parameter
Symbol
Min.
Max
Unit
Power Dissipation
PDISS
00
mW
Collector Emitter Voltage
VCEO
30
V
Emitter Collector Voltage
VECO
5
V
Operating Temperature
TO
-40
85
°C
Storage Temperature
TS
-55
00
°C
Junction temperature
TJ
0
°C
Lead Soldering Temperature
[ .6mm (0.063”) From Body ]
60°C for 5 seconds
°C
Electrical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Collector-Emitter
Breakdown Voltage
V(BR)CEO
30
V
Ic= mA
Ee = 0mW/cm
Emitter-Collector
Breakdown Voltage
V(BR)ECO
5
V
Ie = 00A
Ee = 0mW/cm
Collector Emitter
Saturation Voltage
VCE(SAT)
0.4
V
Ie = 0.5mA
Ee = mW/cm
Collector Dark Current
ICEO
00
nA
VCE=0V
Ee=0mW/cm
Thermal Resistance,
Junction to Pin
RqJP
350
°C/W
Optical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Viewing Angle
θ/
0
Deg
Wavelength of Peak sensitivity
λPK
900
nm
Spectral BandWidth
Δλ
400
900
00
nm
Clear
700
900
00
nm
Dark
Rise Time
tr
0
s
VCC = 5V
Ic = mA
RL = K
Fall Time
tf
0
s
VCC = 5V
Ic = mA
RL = K
On State Collector Current
IC(ON)
.6
9.6
mA
VCE = 5V
Ee = mW/cm
λ = 940nm
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相关代理商/技术参数 |
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| ASDL-6620-D31 | 功能描述:光电晶体管 PTX T1 20deg Lens O pt Drk 8K Bag RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| ASDL-6770 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:High Performance Silicon NPN Phototransistor in Side Look Package |
| ASDL-6770-C22 | 功能描述:光电晶体管 Phototransistor 40 Degrees RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| ASDL-6770-C41 | 功能描述:光电晶体管 PTX Side 40deg 20 K Bag RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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