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参数资料
| 型号： | ASI10579 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.380 INCH, FM-4 |
| 文件页数： | 1/1页 |
| 文件大小： | 14K |
| 代理商： | ASI10579 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 25 mA
35
V
BVCES
IC = 5.0 mA
65
V
BVEBO
IE = 10 mA
4.0
V
ICBO
VCB = 30 V
1.0
mA
hFE
VCE = 5.0 V
IC = 200 mA
5.0
---
---
COB
VCB = 30 V
f = 1.0 MHz
50
pF
PG
ηηηη
C
VCC = 28 V
POUT = 15 W
f = 175 MHz
10
65
dB
%
NPN SILICON RF POWER TRANSISTOR
BLV21
DESCRIPTION:
The
ASI BLV21 is Designed for
Class C, 28 V High Band Applications
up to 175 MHz.
FEATURES:
Common Emitter
P
G = 10 dB at 15 W/175 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
1.75 A
VCEO
35 V
VCES
65 V
VEBO
4.0 V
PDISS
36 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θθθθ
JC
4.8 °C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10579
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
C
B
E
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