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参数资料
| 型号： | ASI10803 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/1页 |
| 文件大小： | 14K |
| 代理商： | ASI10803 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 200 mA
65
V
BVCEO
IC = 200 mA
35
V
BVEBO
IE = 10 mA
4.0
V
ICBO
VCB = 30 V
2.0
mA
hFE
VCE = 5.0 V
IC = 200 mA
10
---
Cob
VCB = 28 V
f = 1.0 MHz
50
pF
PG
ηηηη
c
VCE = 28 V
POUT = 25 W
f = 175 MHz
8.5
50
10
60
dB
%
NPN SILICON RF POWER TRANSISTOR
B25-28
DESCRIPTION:
The
B25-28 is Designed for VHF
Class C Power Amplifier Applications
up to 250 MHz.
FEATURES:
P
G = 10 dB Typical at 25 W/175 MHz
∞
∞
∞ Load VSWR at Rated Conditions
Omnigold Metallization System
MAXIMUM RATINGS
IC
4.0 A
VCB
65 V
PDISS
40 W @ TC = 25
OC
TJ
-55
OC to +200 OC
TSTG
-55
OC to +150 OC
θθθθ
JC
4.4
OC/W
PACKAGE STYLE .380" 4L STUD
ORDER CODE: ASI10803
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
M AXIM UM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
C
B
E
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