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参数资料
| 型号： | ASI10826 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | FM-4 |
| 文件页数： | 1/1页 |
| 文件大小： | 15K |
| 代理商： | ASI10826 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 50 mA
110
V
BVCEO
IC = 200 mA
55
V
BVEBO
IE = 20 mA
4.0
V
ICES
VCE = 55 V
10
mA
hFE
VCE = 5.0 V
IC = 7.0 A
15
50
---
VCE
IC = 20 A
IC = 4.0 A
1.9
V
CC
VCB = 50 V
f = 1.0 MHz
280
pF
GP
IMD3
ηηηη
C
VCE = 50 V
ICQ =100 mA
POUT = 200 W(PEP)
13.5
40
-30
dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
BLW96
DESCRIPTION:
The
ASI BLW96 is Designed for
High Linearity Class A, AB HF Power
Amplifier Applications up to 30 MHz.
FEATURES:
P
G = 14 dB Typical at 200 W/28 MHz
IMD
3 = -32 dBc Typ. at 220 W(PEP)
Omnigold Metalization System
MAXIMUM RATINGS
IC
12 A
VEES
110 V
VCEO
55 V
VEBO
4.0 V
PDISS
320 W @ TC = 25
OC
TJ
-65
OC to +200 OC
TSTG
-65
OC to +150 OC
θθθθ
JC
0.7
OC/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10826
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
E
C
B
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