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参数资料
| 型号： | ASISD1542 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.500 INCH, HERMETIC SEALED, FM-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 41K |
| 代理商： | ASISD1542 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 25 mA
65
V
BVCES
IC = 50 mA
65
V
BVEBO
IE = 10 mA
3.5
V
ICES
VCE = 50 V
35
mA
hFE
VCE = 5.0 V
IC = 250 mA
5.0
200
---
PG
POUT
VCC = 50 V
PIN = 150 W
f = 1025 to 1150 MHz
PULSE WIDTH
= 10
S
DUTY CYCLE
= 1.0%
5.6
550
dB
W
NPN SILICON RF POWER TRANSISTOR
ASI SD1542
DESCRIPTION:
The
ASI SD1542 is a Common Base
Device Designed for, IFF and DME
Pulse Applications.
FEATURES INCLUDE:
Gold Metalization
Input/Output Matching
Hermetically Sealed
MAXIMUM RATINGS
IC
40 A
VCES
65 V
VCBO
65 V
PDISS
1350 W @ TC = 25
OC
TJ
-65
OC to +200 OC
TSTG
-65
OC to +200 OC
θθθθ
JC
0.06
OC/W
PACKAGE STYLE .400 X 500 2L FLG
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