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参数资料
| 型号： | ASJD1200R085Y-EX/V |
| 厂商： | MICROSS COMPONENTS |
| 元件分类： | JFETs |
| 英文描述： | 52 A, 1200 V, 0.085 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| 封装： | HERMETIC SEALED, TO-257, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 240K |
| 代理商： | ASJD1200R085Y-EX/V |
SiC JFET
ASJD1200R085
ASJD1200R085
Rev. 0.0 11/10
Micross Components reserves the right to change products or specications without notice.
2
ADVANCED INFORMATION
Min
Typ
Max
Drain Source Blocking Voltage
BVDS
VGS = 15 V, ID = 600 A
1200
V
VDS = 1200 V, VGS = 15 V,
Tj = 25
oC
110
VDS = 1200 V, VGS = 15 V,
Tj = 150
oC
10
200
VGS = 15 V, VDS = 0V
0.1
0.3
VGS = 15 V, VDS = 1200V
0.1
ID = 43 A, VGS = 2 V,
Tj = 25 °C
0.075
0.085
ID = 43 A, VGS = 2 V,
Tj = 100 °C
0.14
Gate Threshold Voltage
VGS(th)
VDS = 1 V, ID = 34mA
6.00
4.00
V
Gate Forward Current
IGFWD
VGS = 2 V
220
mA
RG
f = 1 MHz, drain source shorted
8
RG(on)
VGS >2.7V; See Figure 5
0.5
Input Capacitance
Ciss
670
Output Capacitance
Coss
103
Reverse Transfer Capacitance
Crss
97
Effective Output Capacitance,
energy related
Co(er)
VDS = 0 V to 600 V,
VGS = 0 V
60
Turn On Delay
ton
TBD
Rise Time
tr
TBD
Turn Off Delay
toff
TBD
Fall Time
tf
TBD
Turn On Energy
Eon
TBD
Turn Off Energy
Eoff
TBD
Total Switching Energy
Ets
TBD
Turn On Delay
ton
TBD
Rise Time
tr
TBD
Turn Off Delay
toff
TBD
Fall Time
tf
TBD
Turn On Energy
Eon
TBD
Turn Off Energy
Eoff
TBD
Total Switching Energy
Ets
TBD
Total Gate Charge
Qg
30
Gate Source Charge
Qgs
1
Gate Drain Charge
Qgd
24
Off Characteristics
Value
Unit
Symbol
Parameter
Conditions
Total Gate Reverse Leakage
IGSS
μA
mA
Total Drain Leakage Current
IDSS
On Characteristics
Drain Source On resistance
Gate Resistance
RDS(on)
Dynamic Characteristics
VDD = 100 V
pF
Switching Characteristics
VDS = 600 V, ID = 40 A,
Inductive Load, TJ = 25
oC
Gate Driver = +15V, 15V
RgEXT = 5ohm
VDS = 600 V, ID = 40 A,
Inductive Load, TJ = 150
oC
Gate Driver = +15V, 15V
RgEXT = 5ohm
VDS = 600V, ID = 40 A,
VGS = + 2.5 V
ns
μJ
ns
μJ
nC
ELECTRICAL CHARACTERISTICS
相关PDF资料 |
PDF描述 |
|---|---|
| ASJE1200R063Y-EX/S | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
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| ASJE1200R063SY-EX/V | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AS-J-F | 制造商:Labfacility Limited 功能描述:SOCKET J ANSI STANDARD LIN 制造商:Labfacility Limited 功能描述:SOCKET, J, ANSI, STANDARD, LINE, For Use With:J Type Thermocouples |
| AS-J-FD | 制造商:Labfacility Limited 功能描述:SOCKET J ANSI STANDARD DUP 制造商:Labfacility Limited 功能描述:SOCKET, J, ANSI, STANDARD, DUPLEX 制造商:Labfacility Limited 功能描述:SOCKET, J, ANSI, STANDARD, DUPLEX, For Use With:J Type Thermocouples |
| AS-J-FF | 制造商:Labfacility Limited 功能描述:SOCKET J ANSI STANDARD FASCIA |
| AS-J-FQ | 制造商:Labfacility Limited 功能描述:SOCKET J ANSI STANDARD QUICK WIRE 制造商:Labfacility Limited 功能描述:SOCKET, J, ANSI, STANDARD, QUICK WIRE, For Use With:J Type Thermocouples |
| ASJK | 制造商:AMSCO 制造商全称:austriamicrosystems AG 功能描述:High-Speed, Low-Voltage, Single-Supply, 0.8-ohm, Dual SPST Analog Switches |
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