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参数资料
| 型号： | ASJE1200R063Y-EL |
| 厂商： | MICROSS COMPONENTS |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| 封装： | HERMETIC SEALED, TO-257, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 240K |
| 代理商： | ASJE1200R063Y-EL |
SiC JFET
ASJE1200R063
ASJE1200R063
Rev. 0.0 12/10
Micross Components reserves the right to change products or specications without notice.
2
ADVANCED INFORMATION
Min
Typ
Max
Drain Source Blocking Voltage
BVDS
VGS = 0 V, ID = 600 A
1200
V
VDS = 1200 V, VGS = 0 V, Tj = 25
oC
200
1200
VDS = 1200 V, VGS = 0 V, Tj = 175
oC
600
2000
VDS = 1200 V, VGS = 15 V,
Tj = 25
oC
2
VDS = 1200 V, VGS = 15 V,
Tj = 175
oC
20
VGS = 15 V, VDS = 0V
0.2
0.6
VGS = 15 V, VDS = 1200V
0.2
ID = 12 A, VGS = 3 V,
Tj = 25 °C
0.045
0.063
ID = 12 A, VGS = 3 V,
Tj = 125 °C
0.11
Gate Threshold Voltage
VGS(th)
VDS = 1 V, ID = 34 mA
1.15
1.4
1.75
V
Gate Forward Current
IGFWD
VGS = 3 V
400
mA
RG
f = 1 MHz, drain source shorted
4
RG(on)
VGS >2.7V; See Figure 5
0.25
Input Capacitance
Ciss
1220
Output Capacitance
Coss
180
Reverse Transfer Capacitance
Crss
169
Effective Output Capacitance,
energy related
Co(er)
VDS = 0 V to 480 V,
VGS = 0 V
100
Turn On Delay
ton
15
Rise Time
tr
12
Turn Off Delay
toff
35
Fall Time
tf
30
Turn On Energy
Eon
160
Turn Off Energy
Eoff
280
Total Switching Energy
Ets
440
Turn On Delay
ton
15
Rise Time
tr
15
Turn Off Delay
toff
35
Fall Time
tf
30
Turn On Energy
Eon
180
Turn Off Energy
Eoff
280
Total Switching Energy
Ets
460
Total Gate Charge
Qg
60
Gate Source Charge
Qgs
2
Gate Drain Charge
Qgd
49
VDS = 600 V, ID = 24 A,
Inductive Load, TJ = 150
oC
Gate Driver = +15V, 10V,
RgEXT = 2.5ohm
See Figure 15 for typical gate drive /
inductive load switching circuit.
VDS = 600 V, ID = 10 A,
VGS = + 2.5 V
ns
μJ
ns
μJ
nC
Dynamic Characteristics
VDD = 100 V
pF
Switching Characteristics
VDS = 600 V, ID = 24 A,
Inductive Load, TJ = 25
oC
Gate Driver = +15V, 10V,
RgEXT = 2.5ohm
See Figure 15 for typical gate drive /
inductive load switching circuit.
On Characteristics
Drain Source On resistance
Gate Resistance
RDS(on)
Total Drain Leakage Current
Total Gate Reverse Leakage
IDSS
IGSS
μA
mA
Off Characteristics
Value
Unit
Symbol
Parameter
Conditions
ELECTRICAL CHARACTERISTICS
相关PDF资料 |
PDF描述 |
|---|---|
| ASJE1200R063SY-EL | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1200R063SY-EL/S | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1200R063SY-EL/V | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1200R063SY-EX/S | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1200R063Y-EX/V | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
相关代理商/技术参数 |
参数描述 |
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