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参数资料
| 型号： | ASMCC0096-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-6 |
| 文件页数： | 4/5页 |
| 文件大小： | 73K |
| 代理商： | ASMCC0096-13 |
DS30379 Rev. 3 - 2
4 of 5
ASMCC0096
www.diodes.com
0.1
1
10
0.1
1
10
100
1000
V
,
BASE-EMITTER
(V)
BE(SA
T
)
SA
TURA
TION
VOL
T
AGE
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
(Transistor Element)
I
C
I
B
=10
0.01
0.1
1
0.1
1
10
100
1000
V
,
COLLECT
O
R-EMITTER
(V)
CE(SA
T)
SA
TURA
TION
VOL
T
AGE
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
(Transistor Element)
I
C
I
B
=10
1
10
1000
100
0.1
1
10
1000
100
h
,
DC
CURRENT
GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
(Transistor Element)
T = -25°C
A
T = +25°C
A
T = 125°C
A
V
= 1.0V
CE
0
5
15
10
0.1
1
10
100
C
,
INPUT
C
AP
ACIT
ANCE
(pF)
IBO
C
,
OUTPUT
CAP
A
CIT
A
NCE
(pF)
OBO
V
, COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
(Transistor Element)
Cibo
Cobo
f=1MHz
0
50
25
50
75
100
125
150
175
200
P
,
POWER
D
ISSIP
A
TION
(mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Temperature (Total Device)
100
150
200
0
MMBT3904 Section
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