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| 型号： | AT-30511-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SMT, 4 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 100K |
| 代理商： | AT-30511-TR1 |
AT-30511, AT-30533
Low Current, High Performance NPN
Silicon Bipolar Transistors
Data Sheet
Description
Avago’s AT-30511 and AT-30533 are high performance
NPN bipolar transistors that have been optimized for
maximum fT at low voltage operation, making them
ideal for use in battery powered applications in wireless
markets. The AT-30533 uses the 3 lead SOT-23, while
the AT-30511 places the same die in the higher
performance 4 lead SOT-143. Both packages are industry
standard, and compatible with high volume surface
mount assembly techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity of
tasks. The 5 emitter finger interdigitated geometry yields
an extremely fast transistor with high gain and low
operating currents.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla-
tor, or active mixer. Typical amplifier designs at 900
MHz yield 1.3 dB noise figures with 13 dB or more
associated gain at a 2.7 V, 1 mA bias. Voltage break-
downs are high enough for use at 5 volts. High gain
capability at 1 V, 1 mA makes these devices a good fit for
900 MHz pager applications.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz fT, 30 GHz fMAX
Self-Aligned-Transistor (SAT) process. The die are
nitride passivated for surface protection. Excellent
device uniformity, performance and reliability are
produced by the use of ion-implantation, self-alignment
techniques, and gold metalization in the fabrication of
these devices.
Outline Drawing
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
305
SOT-23 (AT-30533)
SOT-143 (AT-30511)
Features
High Performance Bipolar Transistor Optimized for Low
Current, Low Voltage Operation
900 MHz Performance:
AT-30511: 1.1 dB NF, 16 dB GA
AT-30533: 1.1 dB NF, 13 dB GA
Characterized for End-Of-Life Battery Use (2.7 V)
SOT-23 and SOT-143 SMT Plastic Packages
Tape-And-Reel Packaging Option Available
Lead-free Option Available
相关PDF资料 |
PDF描述 |
|---|---|
| AT-30533-TR1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-30533-BLK | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-30533-TR2 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-30511-BLK | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31011-TR1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-30511-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-30511-TR2G | 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT30533 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 10MA I(C) | SOT-23 |
| AT-30533 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-30533BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor |
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