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参数资料
| 型号： | AT-31011-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SMT, 4 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 136K |
| 代理商： | AT-31011-BLK |
4-35
P
1dB
(dBm)
0
FREQUENCY (GHz)
1.0
1.5
10
4
2
0.5
2.5
6
2.0
8
10 mA
5 mA
2 mA
5 mA
10 mA
Ga
(dB)
0
FREQUENCY (GHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
10 mA
1 mA
Ga
(dB)
0
FREQUENCY (GHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
1 mA
10 mA
Characterization Information, TA = 25°
AT-31011 AT-31033
Symbol
Parameters and Test Conditions
Units
Typ
P1dB
Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 10 mA
f = 0.9 GHz
dBm
9
G1dB
Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 10 mA
f = 0.9 GHz
dB
15
13
IP3
Output Third Order Intercept Point,
VCE = 2.7 V, IC = 10 mA (opt tuning)
f = 0.9 GHz
dBm
20
|S21|E2
Gain in 50
System; V
CE = 2.7 V, IC = 1 mA
f = 0.9 GHz
dB
10
9
CCB
Collector-Base Capacitance
VCB = 3V, f = 1 MHz
pF
0.04
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
including circuit losses.
Figure 7. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
VCE =2.7 V.
Figure 6. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
VCE =2.7 V.
Figure 5. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 2.7 V.
Figure 4. AT-31033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
Figure 3. AT-31011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
Figure 2. AT-31011 and AT-31033
Minimum Noise Figure and Amplifier
NF[1] vs. Frequency and Current at
VCE =2.7 V.
C
NOISE
FIGURE
(dB)
0
FREQUENCY (GHz)
1
1.5
2.5
1
0.5
2.5
1.5
2
1 mA
10 mA
AMPLIFIER NF
NF MIN.
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
8
4
0.5
2.5
12
2.0
16
2 mA
5 mA
10 mA
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
16
4
0.5
2.5
8
2.0
12
2 mA
5 mA
10 mA
相关PDF资料 |
PDF描述 |
|---|---|
| AT-31011-TR2 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31011-BLK | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31033-TR2 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31011-TR1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31033-TR1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-31011-BLKG | 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT31011TR1 | 制造商:Hewlett Packard Co 功能描述: |
| AT-31011-TR1 | 制造商:HEWLETT 功能描述: |
| AT-31011-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-31011-TR2G | 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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